在Cu_2O涂层上CH_4氧化反应的分子束研究  

THE MOLECULAR BEAM STUDY OF THE OXIDATION OF CH_4 ON Cu_2O COAT

作　　者：王君容[1] 杨学柱[1] 李胜林[1] 席光康[1] 文世骐[2] 

机构地区：[1]南开大学电子科学系,天津300071 [2]天津大学热能工程系,天津300072

出　　处：《真空科学与技术》1993年第1期65-72,共8页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：用分子束技术和电子能谱研究了在Cu_2O涂层上CH_4的氧化反应。实验得到,这个反应的发生需要具备下述条件:(1)Cu_2O表面对氧呈解离吸附,并提供出活性氧原子;(2)CH_4分子束的平动能必须超过59kJ/mol;(3)样品温度不能超过750K。The oxidation of CH_4 on Cu_2O coat has been studied with the molecular beam technique and the electron spectroseopy. It is found that this reaction occurs under the following conditions: (1) The dissociative a adsorption of O_2 on the Cu_2O coat offers an active oxygen atom; (2) The translational energy of CH_4 molecular beam has to be larger than 59 kJ/mol; (3) The temperature of the sample has to be below 750 K.

关 键 词：分子束 俄歇电子谱 甲烷 氧化 涂层 

分 类 号：O623.11[理学—有机化学]