Ba(Sn_(1-x)Sb_x)O_3系陶瓷中的B空位研究  

A Study on B Vacancies in Ba(Sn_(1-x)Sb_x)O_3 Ceramic

作　　者：朱梓英[1] 陈仁术[1] 庄严[2] 

机构地区：[1]中山大学物理学系 [2]广州通信研究所

出　　处：《中山大学学报（自然科学版）》1993年第2期30-36,共7页Acta Scientiarum Naturalium Universitatis Sunyatseni

摘　　要：以正电子湮没技术(PAT)研究Ba(Sn_(1-x)Sbx)O_3系陶瓷中的晶格空位,发现空位浓度在Sb 固溶限以下与x 值呈线性关系.由超高压高温合成法证明Ba(Sn_(1-x)Sb_x)O_3的晶胞参数α_0因Sb 挥发形成V_B 而增大.PAT 测得较小的τd 值,证明占B 位的Sb 在高温下迁移形成了B 空位,指出存在Sn^(4+)空位引起空位电导补偿.Lattice vacancies in Ba(Sn_1(-x)Sb_x)O_3 ceramicare studied by means ofprositron lifetime technique(PAT).It is found that the dependence of vacancyconcentration on the value of x is linear below the Sb solubility limit.Theresults obtained at superhigh pressure and temperature synthesis condition showan increase of the crystal parameter a_0 of Ba(Sn_(1-x) Sb_x)O_3 as V_B vacancies areincreased due to sb volatilization.The small values of τd in our PAT measure-ments support that,under.high temperature,some of the Sb located on B sitesmay migrate away and leave vacancies behind and that the Sn^(4+) vacancies maylead to conduction vacancy compensation.

关 键 词：陶瓷 晶格空位 B空位 

分 类 号：TQ174.1[化学工程—陶瓷工业]