硼掺杂p-型半导体金刚石薄膜的气相合成及其掺杂行为的研究  

Preparation of High Quality Boron Doped P-Type Semiconducting Diamond Films and Investigation of Doping Behavior

作　　者：于三[1] 邹广田[1] 金曾孙[1] 

机构地区：[1]超硬材料国家重点实验室吉林大学原子与分子物理研究所,长春130023

出　　处：《Journal of Semiconductors》1993年第9期579-584,T001,共7页半导体学报（英文版）

摘　　要：利用灯丝热解CVD方法以甲烷和氢气为原料、以单质硼为掺杂源,制备了高晶体品质的硼掺杂多晶金刚石薄膜。其晶体结构及晶格常数与天然立方结构金刚石相同,硼掺杂后未引起金刚石薄膜中非金刚石碳含量的增加。证实了硼掺杂金刚石薄膜为p-型半导体材料,其最大硼掺杂浓度接近10^(20)cm^(-3),最大室温空穴载流子浓度达到10^(18)cm^(-3)。由硼掺杂金刚石薄膜红外吸收数据及类氢模型的估算证实了硼在金刚石的禁带中引入了位于价带以上约0.35eV的受主能级。Boron doped p-type semiconducting diamond films have been prepared by using the chemicalvapor deposition (CVD) method. The crystal structure and lattice spacing of the specimensare the same as that of natural cubic diamond. No excess carbon content was caused byboron doping. The maximum boron concentration in diamond films was measured to be about10^(20)cm^(-3). The maximum carrier concentration of holes at room temperature is near 10^(18)cm^(-3).A sharp peak located at about 1280cm^(-1) and a broad peak in between 2100-2900cm^(-1) are observedin IR absorption spectra. It indicates that boron atoms substitute carbon atoms in normaldiamond lattice positions and cause an aeceptor level of 0. 35eV above the diamond valenceband. In addition, Hydrogen-like model of boron atom in diamond also gives that the ionizationenergy of the acceptors is about O. 35eV.

关 键 词：半导体材料 金刚石薄膜 合成 掺杂 

分 类 号：TN304[电子电信—物理电子学]