InGaAsP/InP PBH双区共腔双稳激光器的H^+轰击掩膜研究  

Investigation of Proton Bombardment Mask for InGaAsP/InP PBH CCTS Bistable Lasers

作　　者：张权生[1] 吕卉[1] 杜云[1] 马朝华[1] 吴荣汉[1] 高洪海[1] 高文智[1] 芦秀玲[1] 

机构地区：[1]光电子集成国家重点联合实验室中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1993年第9期562-567,T001,共7页半导体学报（英文版）

基　　金："863"高技术资助

摘　　要：在InP H^+轰击工艺研究基础上,开发出一种对中等轰击能量(E≤250keV)的H^+具有满意掩蔽能力的掩膜──Au/Zn/Au/AZ 1350J复合膜,并首次解决了条宽窄至5μm的Au/Zn/Au/AZ 135J断条状掩膜的制备技术,在InGaAsP/InP PBH双区共腔双稳激光器的制备中获得了成功应用。A new kind of screen material for proton bombandment, Au/Zn/Au/AZ1350J compoundmask which behaves good screen property when the bombarding energy is not larger than250keV, has been developed based on the study of Ir P proton bombardment. The technologyof making compound mask for stripe wide of 5μm has been resolved for the first time, and hassuccessfully fabricated the InGaAsP/InP PBH Common-cavity Two-section (CCTS) bistablelasers.

关 键 词：半导体激光器 INGAASP/INP 共腔 

分 类 号：TN248.4[电子电信—物理电子学]