轻掺铬SI-GaAs单晶的研制  

Investlgation for Low Cr-Doped SI-GaAs Single Crystal Growth

作　　者：谢自力[1] 夏德谦[1] 陈宏毅[1] 朱志明[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1993年第2期161-164,共4页Research & Progress of SSE

摘　　要：本文报导了LEC法SI—GaAs单晶的研制及结果分析。在SI—GaAs非掺杂单晶生长基础上,生长了一种轻掺铬的SI—GaAs单晶,并在VPE等应用中取得了较好结果。This paper introduces a method of growing SI-GaAs single crystal and gives the results of analysis. On the basis of the undoped LEC-SI-GaAs single crystal,the low Cr-doped SI-GaAs single crystals were grown. The performances of devices fabricated using VPE and implantation on this materials are excellent.

关 键 词：掺铬 半绝缘砷化镓 单晶制备 

分 类 号：TN304.053[电子电信—物理电子学]