3mm波段硅双漂移崩越二极管外延材料研制  

An Investigation of the Epitaxial Material for 3 mm Waveband Si DDR IMPATT Diodes

作　　者：王向武[1] 陆春一[1] 赵仲镛 孙景山 魏广富 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1993年第3期238-243,共6页Research & Progress of SSE

摘　　要：报导了3 mm波段硅双漂移崩越二极管所需PN/N^+多层、亚微米外延材料的常规CVD生长技术,研究了实现这些高要求的多层结构的方法,得到了最佳的外延工艺条件。In this paper,a vapor phase growth technique of PN/N+ multilayer submicron epitaxial material for 3 mm waveband Si DDR IMPATT diodes is pre-sented. The approaches to obtain these high quality multilayer structures are studied. The optimum epitaxial process conditions have been established.

关 键 词：双漂移崩越二极管 亚微米 多层外延 

分 类 号：TN312.7[电子电信—物理电子学]