新型InGaAs/InP多量子阱异质结构掺杂超晶格光波导调制器  

A New InGaAs/InP Multiquantum Well Hetero Doping Superlattice Waveguide Modulator

作　　者：林洪榕[1] 

机构地区：[1]南京邮电学院电信工程系,210003

出　　处：《固体电子学研究与进展》1993年第3期210-215,共6页Research & Progress of SSE

摘　　要：提出一种新型的InGaAs/InP多量子阱异质结构掺杂超晶格光波导调制器。这种结构的器件结合了多量子阱大的光吸收非线性和掺杂超晶格低激发强度的优点,因此具有低驱动偏压差、高通断比率和高的调制响应速率。低的驱动偏压差、小的器件尺寸以及通过扩散形成的分隔接触电极结构(因此可以和传统的平面加工技术兼容),使这种器件特别适合于作为大规模光电集成的单元光调制器和光开关。A new InGaAs/InP multiquantum well hetero doping superlattice light waveguide modulator has been proposed. The structure combines the advan-tages of both the large light absorption nonlinearity of multiquantum well and the low- power excitation intensity of doping superlattice. Therefore,the device has low difference of drive voltage, large on/off ratio, and high modulation rate. Low drive voltage difference,small size and separated contact structure by impurity dif-fusion (hence compatible with conventional planar processing techniques ) make it suitable for large scale photoelectronic integration

关 键 词：多量子阱 掺杂超晶格 光波导调制器 

分 类 号：TN304.26[电子电信—物理电子学]