微波器件失效率快速试验方法研究  

A Study on Speedy Test Method of Failure Rate of Microwave Devices

作　　者：娄书礼[1] 龚朝阳[1] 金毓铨[1] 苏德青 

机构地区：[1]南京电子器件研究所,210016 [2]中国电子产品可靠性与环境试验研究所,广州510610

出　　处：《固体电子学研究与进展》1993年第4期367-373,共7页Research & Progress of SSE

摘　　要：介绍了微波低噪声ＧａＡｓＦＥＴ恒定应力加速寿命试验结果，沟道温度Ｔｃｈ为１４５℃时，平均寿命ＭＴＴＦ为９．６４×１０＾６ｈ，最主要的失效模式是源漏饱和电流ＩＤｓｓ退化降低。建立了表征ＧａＡｓＦＥＴ稳定性的敏感参数ＩＤｓｓ的退化模型ＩｎＰ＝α＋ｂｌｎｔ，分析了ＩＤｓｓ退化与温度应力的加速关系。提出了快速推断器件可靠性的建议。The result of accelerated life test of microwave low-noise GaAs FET under constant stress is described in this paper. Average lifetime, MTTF, of the tested GaAs FET at channel temperature of 145 C is 9. 64 x 106 h. The main failure mode is the degradation of drain-source saturated current IDSS. A degradation model of the sensitive parameter IDSS, InP=a+blnt,has been created to characterize the stability of the GaAs FET. Acceleration relation of the IDSS degradation to the temperature stress is analyzed. A suggestion for fast deducing the reliability of the de-vice has been proposed.

关 键 词：可靠性 失效分析 微波器件 试验法 

分 类 号：TN12[电子电信—物理电子学]