p型掺杂GaAs液相外延材料的光致发光研究  

Study of Photoluminescence in p-Type Doped GaAs Grown by Liquid-Phase Epitaxy

作　　者：华伟民[1] 陈美云 沈雅珍[1] 董绵豫[1] 张松斌[1] 丁祖昌[1] 

机构地区：[1]浙江大学,杭州310027

出　　处：《光电子技术》1993年第4期59-63,共5页Optoelectronic Technology

基　　金：国家自然科学基金; 浙江省分析测试基金

摘　　要：对Si掺杂和Zn掺杂p型GaAs液相外延材料进行光致发光研究。用发射波长为510.6nm和578.2nm的溴化亚铜激光器为激发光源,样品的低温由氦循环致冷机提供,样品室温度在10～300K中可调。在所选取的狭缝宽度下谱仪的分辨率大致为2nm,所提供的数据全部经过系统灵敏度校正并进行分峰拟合。对Si掺杂p型GaAs样品PL谱中一些主要特征进行讨论,认为A_1,A_2,A_3三个发射带分别对应着导带“尾”态中电子向价带和两个浅受主能级的跃迁,它们随温度变化的情况,和带隙宽度及电子填充状态随温度变化有关。此外,我们还观察了掺Zn的p型GaAs样品的PL谱,与掺Si样品比较,具有明显不同的特征,谱线在长波端(～950nm)的上扬趋势表明在低能区域可能存在一个与深能级复合有关的宽发射带。The radiative processes in p-type GaAs doped with Si and Zn prepared by liquid-phase epitaxy have been studied by photoluminescence at 300K to 60K. The photoluminescence spectra were obtained by CuBr-laser. Low temperature data were obtained with the specimens mounted on a cold finger in a cooler with He-circle system. In the p-type Si-doped GaAs material, three emission bands A_1, A_2 and A_3 can be explained in terms of recombination processes involving the transitions from conduction band ('tail') to valence band, shallow (～40 meV) acceptor states and deep (～100 meV) acceptor states respectively. The dependence of peak energy and relative intensity on temperature were discussed. The PL spectra of a Zn-doped sample which characteristics are obviously different from those of Si-doped samples were also observed. The results show that there may be a wide emission band involving a deep energy level recombination in lower energy region.

关 键 词：光致发光 掺杂 液相外延 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]