氮气氛直拉硅的本征吸杂的研究  

Investigation on the Intrinsic gettering effect in NCZSI

作　　者：佘思明 李立本 彭世宽[1] 

机构地区：[1]高纯硅与硅烷国家重点实验室

出　　处：《浙江大学学报（自然科学版）》1993年第4期498-506,共9页

摘　　要：本文利用化学腐蚀、扩展电阻探针、透射电镜和电子探针等研究了氮气氛直拉硅的本征吸杂。经高——低——高三段热处理可获得比较完整的洁净区,体内有高密度且分布均匀的氧沉淀及其诱生缺陷,它们具有吸杂能力。洁净区内有片状残余缺陷。跟氩气氛直拉硅相比,氮气氛直拉硅的氧沉淀及其诱生缺陷有些不同。体内沉淀除片状外,主要是四面体。层错中央无氧沉淀。位错环是由氧沉淀诱生位错成为F—R源增殖的。The intinsic gettering effect in NCZSi has been investigated in this paper by means of CE, ASR, EPMA,TEM and EDXD. Thrugh H-L-H three-step heattreatments, a better denuded zone can be obtained. In the bulk of wafer there highly densified and homogeneously distributed oxygen precipitates and their induced defecfs. They possess very earge capacity of gettering impurities. In DZ, there are a few silice residual precipitates. when compared with ACZSi, there are some differences between the oxygen precipitates and their induced defects in NCZSi and those in ACZSi. Apart from slice precipitates and their induced defects ,there mainly exist tetrahedrons, There are no oxygen precipitate in the cemter of staching taults. The dislocation loops are no oxygen precipitate in the center of stacking faults. The dislocation loops are not punched-out, whill they are multipticated from oxygep precipitate induced diseocation which acts as Frank-Read source.

关 键 词：直拉硅 本征吸杂 氮气氛 

分 类 号：TN304.12[电子电信—物理电子学]