CF_4、SF_6和NF_3反应离子腐蚀硅表面粗糙度的研究  

Roughness of the Reactive Ion Etched Silicon Surface by CF_4, SF_6 and NF_3

作　　者：苏毅[1] 谭淞生 王渭源 

机构地区：[1]复旦大学物理系,上海200433 [2]中国科学院上海冶金研究所传感技术联合开放国家实验室,上海200050

出　　处：《Journal of Semiconductors》1993年第6期375-380,T001,T002,共8页半导体学报（英文版）

摘　　要：本文采用CF_4、SF_6和NF_3三种腐蚀气体对硅进行反应离子腐蚀,研究了腐蚀表面粗糙度与腐蚀工艺条件(气压、射频功率),附加气体和腐蚀深度等因素之间的关系。并通过SEM和Auger能谱仪分析,探讨了引起腐蚀表面粗糙的原因。Silicon wafers with aluminum pattern were etched by CF_4, SF_6 and NF_3 in a reactive ion etching system. The surface roughness in the etched area was related to process parameters (pressure, r. f. power), additional gases, etched depth and so on. This paper also discusses the reason which causes the surface roughness during the etching process and presents the results of SEM and Auger analyses.

关 键 词：反应离子刻蚀 腐蚀工艺 表面粗糙率 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]