离子注入甜菊种子效应初报  被引量:42

Preliminary Study on Effects of Ion Implantation on Stevia Seeds

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作  者:舒世珍[1] 朱凤绥[1] 陆挺[1] 

机构地区:[1]中国农科院作物品种资源所,中国农科院作物育种栽培所,北京师范大学低能核物理所

出  处:《安徽农业大学学报》1994年第3期299-302,共4页Journal of Anhui Agricultural University

摘  要:甜菊种子用N离子束照射(能量35~100keV,剂量1013~1016/cm2)经二年试验看出,N离子注入可促进生长,与对照相比,最优处理剂量1013/cm2的株高、节数、叶片数、干叶重及茎根干重分别提高22%、10%、38%、54%、81%,植株茎粗及单株叶面积分别提高14%及47%,单株产量提高12%,小区产量增加41%,总糖甙含量提高2.8度,优质糖莱包迪A甙含量提高1.88度,总产糖量增加83%,莱包迪A糖产量增加162%。本文还就其诱变机理与γ射线处理区别进行了讨论。After implantation of N+ ion with 3 5 keV/amu under the dose for 1013/cm2 into steviaseeds,plant height,node number,leaf number,dry leaf weight,dry weight of stem and root in-creased by 22%,10%,38%,54%and 81%respectively.Stem wide of plant,leaf area of perplant,yield of per plant,yield of the plot increased by l4%, 47%,12%and 4l%respectively.Content of total stevioside and good quality rebaudioside A increased by 2.8 and 1.88 degree re-spectively .The yield of total stevioside and rebaudioside A increased by 83%and 1 6%respec-tively. The problem of its mutation mechanism and the differences between ion implantation andγ-ray irradiation were also discussed in this paper。

关 键 词:甜菊 离子注入 种子 效应 

分 类 号:S566.903.5[农业科学—作物学]

 

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