GaAs微微秒光导开关的研究  

Study of ps GaAs Photoconductive Switch

作　　者：潘家齐[1] 吕福云[1] 袁树忠[1] 李晓民[1] 庄婉如 

机构地区：[1]南开大学电子科学系,北京国家集成光电子学联合实验室

出　　处：《Journal of Semiconductors》1994年第4期255-260,共6页半导体学报（英文版）

摘　　要：采用离子注入高纯ＬＥＣＧａＡｓ材料，设计研制了共面线和微带线两种结构微微秒（ｐｓ）光导开关．其输出电脉冲响应时ＩＮＦＷＨＭ为８—１０ｐｓ，当光强为１ｍＷ时，电脉冲幅度为０．Abstract Adopting the ion-implanted high-pure LEC GaAs materials,we have developed some photoconductive switches which were on a microstrip,transmission lineor on a coplanar transmission line. The duration of generated electrical pulses wasabout 8-10ps. The amplitude was about 0.2V when the exciting optical power was1 mW.

关 键 词：光导开关 砷化镓 微微妙 

分 类 号：TN256[电子电信—物理电子学]