GaAs／GaAlAs双异质结光波导开关内带隙的注入载流子感生变化  

Injected Carrier-induced Band-Gap Change in GaAs/GaAlAs Double Heterostructure Waveguide Optical Switch

作　　者：王德煌[1] 王威礼[1] 庄婉如[1] 林雯华 

机构地区：[1]集成光电子学国家重点联合实验室半导体所实验区,北京大学物理系,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1994年第7期455-459,共5页半导体学报（英文版）

摘　　要：本文研究了ＧａＡｓ／ＧａＡｌＡｓ双异质结光波导开关内波导层带隙的载流子注入感生变化．给出了带隙变化值随注入载流子浓度变化的关系曲线，并与带填充理论和带隙收缩理论的计算结果进行了对比分析．Abstract The injected carrier-induced band-gap change in GaAs/GaAlAs double heterostructure waveguide optical switch has been studied. The curves between the band-gap change values and injected carrier concentrations are shown. The experimental results is compared with the computed results by using the band-filling theory and band-gap shrinkage theory.

关 键 词：砷化镓 GAALAS 光波导开关 载流子 

分 类 号：TN305.3[电子电信—物理电子学]