Supported by the National Natural Science Foundation of China under Grant Nos 61171042 and 61301023;the Introducing Talent Scientific Initial Foundation of Nanjing Institute of Technology of China under Grant Nos YKJ201320,YKJ201322,and YKJ201323
To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum ...
An investigation of the optical properties of a GaAs spherical quantum dot which is located at the center of a Ga1-xAlx As cylindrical nano-wire has been performed in the presence of an external electric field. The ba...