GaAlAs红外发光二极管低频噪声检测方法  

Method of Lowfrequency Noise Measurement for GaAlAs IREDs

作　　者：熊建国[1] 赵华[2] 黄贻培[1] 杨代强 陈志高[3,4] 

机构地区：[1]重庆科创职业学院机电学院,重庆402160 [2]河北师范大学电子工程系,石家庄050024 [3]中国地震局地震研究所(地震大地测量重点实验室),武汉430071 [4]重庆科技学院电气与信息工程学院,重庆402160

出　　处：《电子器件》2015年第6期1249-1252,共4页Chinese Journal of Electron Devices

基　　金：中国地震局地震研究所基金项目(IS20136001);重庆市高等教育教学改革研究重点项目(132018)

摘　　要：通过分析Ga Al As红外发光二极管(IRED)的低频噪声产生机理及特性,建立了Ga Al As IRED的噪声模型,设计了一套低频噪声测试系统,通过该系统测量得到了Ga Al As IRED的低频噪声。实验表明,该方法能准确的测量Ga Al As IRED的低频噪声,发现其低频噪声主要表现为1/f噪声,得到与噪声模型一致的结果。该研究为Ga Al As IRLED可靠性的噪声表征提供了实验基础与理论依据。By analyzing the low frequency noise mechanism and characteristics of the Ga Al As infrared light-emit-ting diode（IRED）,the noise model of Ga Al As IRED is established,a set of measurement systems of the low fre-quency noise is designed,and low-frequency noise of Ga Al As IRED is obtained by the measurement system. Experi-mental results show that the method can accurately measure low-frequency noise of Ga Al As IRED,and find out thatthe low-frequency noise is mainly for 1/f noise. The noise model is consistent with the results. The work done aboveprovides an experimental and theoretical basis for low-frequency noise to be used in characterizing reliability ofGa Al As IREDs.

关 键 词：低频噪声 红外发光二极管 噪声模型 氧化层陷阱 

分 类 号：TN36[电子电信—物理电子学] TN386.1