GaAlAs红外发光二极管RTS噪声测试方法研究  

RTS Noise Measurement Method in GaAlAs IRED

作　　者：杨建[1] 吕瀚[1] 陈志高[1] 

机构地区：[1]中国地震局地震研究所(地震大地测量重点实验室),武汉430071

出　　处：《电子器件》2016年第4期764-767,共4页Chinese Journal of Electron Devices

基　　金：中国地震局地震研究所基金项目(IS20136001)

摘　　要：提出了一种Ga Al As红外发光二极管自动温控RTS(Random Telegraph Signal)噪声测试新方法。通过分析Ga Al As IRLED的RTS噪声产生机理及特性,建立了Ga Al As IRLED的RTS噪声模型,设计了自动温控噪声测试系统。实验结果表明,该方法能准确的测量Ga Al As IRLED的RTS噪声,得到与噪声模型一致的结果,为Ga Al As IRLED可靠性的噪声表征提供了实验与理论依据。A new RTS noise test method of GaA1As infrared light-emitting diodes automatic temperature control is proposed. By analyzing the RTS noise generating mechanism and characteristic of GaAlAs IRLED, the GaA1As IRLED RTS noise model is established and automatic temperature control noise test system is designed. The experimental results show that the method can accurately measure GaA1As IRLED RTS noise, results are consistent with the noise model that provides reliability of the noise characterization of experimental and the theoretical basis for GaAlAs IRLED.

关 键 词：RTS噪声 红外发光二极管 噪声模型 氧化层陷阱 自动温控 

分 类 号：TN36[电子电信—物理电子学] TN386.1