砷化镓声电荷输运的二维互作用模型  

Two-Dimensional Interaction Model for Acoustic Charge Transport in Gallium Arsenide

作　　者：邹英寅[1] 

机构地区：[1]浙江大学

出　　处：《Journal of Semiconductors》1994年第7期460-464,共5页半导体学报（英文版）

基　　金：国家教委博士点专项基金

摘　　要：本文对砷化镓Ｓｃｈｏｔｔｋｙ－Ｎ结构的埋沟声电荷输运器件中的信号电荷包与声表面波非线性互作用建立了二维模型．研究了电荷包的声表面波输运特性，给出了包内信号电行密度分布，电荷包形状及电荷量随器件电荷加载、沟道常数等特性参量的变化特性．Abstract A two-dimensional nonlinear interaction model of signal charges and surface acoustic wave(SAW)is developed for Schottky-N GaAs buaried channel acoustic charge transport(ACT) devices.The process of a charge packet transported by SAW is studied.The characteristics,such as shape,charge density distribution and charge capacity of a charge packet,varied with channel constant,traveling wave field and normalized charge loading is given.

关 键 词：砷化镓 电荷输运 二维 模型 

分 类 号：TN304.23[电子电信—物理电子学]