布里兹曼法碲镉汞（Hg_（1－x）Cd_xTe）晶体生长过程热场的数值分析  

Numerical Analysis of Temperature Field in Bridgman Crystal Growth of Hg_(1-x)Cd_xTe

作　　者：王培林[1] 魏科[1] 周士仁 

机构地区：[1]哈尔滨工业大学自控系

出　　处：《Journal of Semiconductors》1994年第9期596-602,共7页半导体学报（英文版）

摘　　要：用控制容积法对布里兹曼法碲镉汞（Ｈｇ１－ｘＣｄｘＴｅ）晶体生长过程热场分布进行了计算．介绍了控制容积公式的推导和边界条件的处理，并对所得结果进行了分析．虽然碲镉汞晶体生长时热场受系统的影响情况错综复杂，但从本文的研究结果中仍可看出一些明显的规律，可供从事该方面研究工作时参考．Abstract The temperature field distribution in Bridgman crystal growth of Hg1-xCdxTe is calculated with volumecontrol method. The derivation of Volumecontrol equations arid the treatments of boundary conditons are introduced. The calculated results are analysed. Although the temperature field affected by the systemduring the Hg1-xCdxTe crystal growth is very complicated, some explicit results which would be useful in the research can also be obtained from the analysis.

关 键 词：晶体生长 布里兹曼法 碲镉汞 

分 类 号：O78[理学—晶体学]