多孔硅的氢化、氧化与光致发光  

Hydrogenation, Oxidation and Photoluminescence of Porous Silicon

作　　者：张丽珠[1] 段家忯[1] 林军[1] 张伯蕊[1] 毛晋昌[1] 付济时[1] 秦国刚[1] 许振华[1] 

机构地区：[1]北京大学物理系,北京大学化学系

出　　处：《Journal of Semiconductors》1994年第10期674-680,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：对于刚阳极氧化完的，阳极氧化后紧接着在Ｈ２Ｏ２中光照处理的及长期存放（１０个月）的三种多孔硅样品进行了持续激光照射，不断监视它们的光致发光（ＰＬ）与富利埃变换红外（ＦＴＩＲ）吸收光谱，并在最后对它们作了Ｘ射线光电子能谱（ＸＰＳ）测量，以确定它们所含氧化硅的情况．得出如下几条结论：（１）氢对多孔硅表面的钝化是不稳定的．（２）Ｓｉ—Ｈ键不是发光所必须的．（３）氧对多孔硅表面的钝化是稳定的，纳米硅周围氧化层的存在及其特性对于稳定的多孔硅可见光发射是至关重要的．对激光照射下多孔硅发光的退化提出了新的解释．Abstract We have illuminated three kinds of porous silicon (PS) samples, as prepared by anodic etching, processed in H2O2 after produced, and stored in air for long time(10 months) with laser and monitored their photoluminescence and Fourier-Transform infrared(FTIR) absorption and finally measured their X-ray photoelectron spectrum(XPS). It is concluded: (1) the passivation of hydrogen on PS surfaces is not stable. (2) Si-H bonds are not neccessary for the visible luminescence of PS. (3) the passivation of oxygen on PS surfaces is stable and the existence and properties of oxidizing layers surrounding nanosilicon are extremely important for the visible luminescence stability of PS A new explaination about the degradation of PS photoluminescence under laser illumination is suggested.

关 键 词：多孔硅 氢化 氧化 光致发光 

分 类 号：TN304.12[电子电信—物理电子学]