用激光探针测量半导体器件中的载流子浓度调制效应  

Detection of Carrier Density Modulation in Semiconductor Devices Using Laser Beam Probe

作　　者：江剑平[1] 李艳和[1] 武建平 许知止 

机构地区：[1]清华大学实验区,清华大学电子工程系

出　　处：《Journal of Semiconductors》1994年第11期774-781,共8页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文采用１．３μｍＨｅ－Ｎｅ激光或ＩｎＧａＡｓＰ／ＩｎＰ半导体激光作探针，实时、无损地测量硅半导体器件中的自由载流子浓度的变化．从理论上分析了器件内自由载流子浓度变化引起的折射率改变及由此产生的光相位调制．它适用干硅和砷化镓材料的电子和光电子器件．本方法也显示了在测量集成电路内部有源器件特性方面的潜在应用前景．Abstract The real-time nondestruttive optical detection of carrier density modulation in semiconductor devices Using a 1.3μm He-Ne laser or a InGaAsP/InP semiconductor laser as an optical beam probe is reported. The variation of refractive index induced by free carrier and optical phase modulation are analysed theoretically.It is applicable to electronic and optoelectronic devices fabricated by St and GaAs materials. It also shows the potential application in measuring parameters of active devices inside integrated circuits.

关 键 词：半导体器件 载流子浓度 激光探针 测量 

分 类 号：TN303[电子电信—物理电子学]