TI膜微桥隧道结的低频1／f噪声  

THE LOW FREQUENCE 1/f VOLTAGE NOISE OF THE T1 FILM MICROBRIDGE

作　　者：吴培钧 杨涛[1] 陈烈[1] 刘东[1] 刘贵荣[1] 阎小林[1] 

机构地区：[1]中国科学院物理所国家超导实验室,西北大学物理系,南开大学电子系

出　　处：《低温物理学报》1994年第5期350-353,共4页Low Temperature Physical Letters

摘　　要：我们在７７Ｋ下测量了ＴＩ膜微桥结的低频１／ｆ电压噪声和Ｉ－Ｖ特性曲线并得到了１０ＨＺ下偏置电流和电压噪声关系．实验结果表明在临界电流附近总有噪声峰出现．在不同的磁场下冷却样品，噪声峰的幅度并不改变．这一结果意味着ＴＩ膜微桥隧道结的１／ｆ噪声主要来自于临界电流的涨落，而不象是由于磁通捕获造成的．AbstractWe have measured the low frequence 1/j voltage noise of the Tl film microbridge junctions and I-V characteristics curve at 77K,and obtained the relation of the bias current vs. voltage noise at 10Hz. The experimental results showed that a noise Peek always present near the critical current Ic.By cooling the samples in different magnetic field, we found that the noise Peek does not change in amplidude. This implies that the 1/jnoise of the Tl film microbridge mainly results from the fluctuationin Ic,and is not likely due to the trapped flux.

关 键 词：量子干涉仪 超导膜 隧道结 噪声 

分 类 号：O511.9[理学—低温物理]