铋钼氧化物单晶电化学生长和半导体特性  

GROWTH OF TERNARY BISMUTH MOLYBDENUM OXIDE SINGLE CRYSTAL AND ITS SEMICONDUCTING PROPERTIES

作　　者：田明亮[1] 毛志强[1] 朱警生[1] 石磊[1] 周贵恩[1] 王瑞萍[1] 石兢[1] 余祖兴[1] 田德试 

机构地区：[1]中国科学技术大学结构分析开放研究实验室,中国科学技术大学物理系,武汉大学物理系

出　　处：《低温物理学报》1994年第6期434-438,共5页Low Temperature Physical Letters

摘　　要：本文利用电解还原Ｂｉ２Ｏ３－ＭｏＯ３熔盐方法，成功生长制备了大体积高质量铋钼氧化物单晶．该单晶呈紫红色薄片，具有正交对称性，晶胞参数为：ａ＝９．９９１（９）Ａ，ｂ＝４．０７８（３）Ａ，ｃ＝１４．４３８（２）Ａ，ａ＝β＝γ＝９０°．Ｘ射线光电子能谱（ＸＰＳ）定量分析表明，单晶的经验化学式为：Ｂｉ０．４２Ｍｏ２Ｏ５．４低温电导呈半导体特性，热激发能ξｇ０．２４ｅＶ．AbstractBy use of the electrolytic reduction of the molten Salt of Bi2O3-MoO3, large size and high quality single crystal of the ternary bismuth molybdenum oxide was successfully grown. The shape of this phase is thin platelet with purple-red color, and the space symmetry is orthorhombic. The unit cell parameters are that: a =9. 9919A, b =4. 0783A, c =14. 4382A, a= β= γ = 90°.X-ray photoemission spectra analysis show that the empirical formula of the single crystal has the form of Bi0. 42Mo2O6. 4. Resistivity measurement at low temperature range shows semiconducting behavior, the thermal activation energy ξ, are about 0. 24 eV.

关 键 词：铋 钼 氧化物 单晶 电化学生长 半导全特性 

分 类 号：O472[理学—半导体物理] TN304.22[理学—物理]