多孔硅的光致发光谱  

The Prepation of the porous silicon Film and the Measurement of Photoluminescen Spectra

作　　者：汪开源[1] 刘柯林[1] 唐洁影[1] 

机构地区：[1]东南大学电子工程系

出　　处：《电子器件》1994年第2期48-53,共6页Chinese Journal of Electron Devices

摘　　要：本文介绍了用电化学腐蚀的阳极氧化工艺，在硅衬底上制备多孔硅（ＰＳ）薄膜，实验测定了多孔硅薄膜的光致发光谱（ＰＬ），发现光致发光谱峰值波长随阳极氧化时间、ＨＦ浸泡时间或置于空气中自然氧化时间增加而向短方向移动（“蓝移”）．文章用量子限制效应（ＱＣＥ）理论解释了上述实验结果，并提出了在多孔硅发光机制中还存在表面态及实物质在发光中的作用。In this paper,a kind of technology for producing porous Silicon(PS)film on Sisubstrate, using electrochemical anodic oxidation(AO)method,is introduced.Thephotoluminescence (PL) spectra measured by us Shows that their peak wavelength will appear blue shift″with increaring AO time,HF scak time or natural oxidation time. We explain the above PLphenomena from quantum confinement effect(QCE),and infer that PS surface states also play a role in luminous mechanisms.

关 键 词：多孔硅 光致发光谱 硅衬底 

分 类 号：TN304.12[电子电信—物理电子学] TN304.07