扫描电镜在研制新型的半导体微腔激光器─微盘激光器中的应用  

Aplication of SEM in Developing Novel Semiconductor Microcavity Lasers─ Microdisk Lasers

作　　者：章蓓[1] 张存珪 戴伦[1] 丁晓民[1] 杨志坚[1] 王若鹏[1] 徐军[1] 张会珍[1] 王世光[1] 

机构地区：[1]北京大学物理系和介观物理重点实验室,北京电子显微镜实验室

出　　处：《电子显微学报》1994年第4期301-304,共4页Journal of Chinese Electron Microscopy Society

摘　　要：本研究用扫描电镜（ＳＥＭ）电子束曝光技术和相应的计算机联机成像程序，在ＩｎＧａＡｓＰ／ＩｎＰ液相外延片上形成电子束光刻图形，并采用选择腐蚀等技术，由ＫＹＫＹ－１０００ＢＳＥＭ并附Ｘ射线能谱仪和图像处理系统对研制过程进行监控，成功地在国内首次研制出由ＩｎＧａＡｓＰ单量子阶分别限制的五层四元系组成的新型半导体微盘激光器，微盘直径为２－７μｍ，盘厚０．２－０．４μｍ。这一成功为开展半导体微盘激光器的研究打下了良好的基础。Semiconductor InGaAsP microdisk laser have been successfully fabricated firstly in the country. The mi-crodisk was made on InGaAsP/InP epitaxial wafer with liquid phase epitaxy (LPE)grown single quantum well-separate confinement heterostructure(SQW-SCH).The diameters of the disk were in the range of 2 to 7μmwith the thicknesses from 0.2 to 0.4 μm. The disk patterns were produced by electron beam lithography. Theelectron beam writing system was set up in a scanning electron microscope(SEM)connected by a personal com-puter. The three dimensional micro disk lasers were then prepared by selective chemical etching process whichwas checked by KYKY-1000B SEM with an accessory image processing system. This successful fabrication pro-vides a good basis for further study on the semiconductor micro disk laser.

关 键 词：微盘激光器 电子束光刻 SEM 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]