a－SiTFT　LCD象素电压跳变特性研究  

An Investigation on Level Shift Characteristics for Pixel Electrode Voltage of a-Si TFT LCD

作　　者：张盛东[1] 薛文进 

机构地区：[1]南京电子器件研究所,国家平板显示工程技术中心

出　　处：《电子学报》1994年第8期59-64,共6页Acta Electronica Sinica

摘　　要：ａ－ＳｉＴＦＴ栅源电容Ｃｇｓ不仅为栅源电极交叠所产生的寄生电容Ｃｇｓｐ，还应包括栅电极与源端沟道间的本征电容Ｃｇｓｉ．用缓变沟道近似模型推导了Ｃｇｓｉ的表达式。通过对象素电极电压跳变公式的修正，圆满解释了先前的公式所不能解释的几个实验结果，从而澄清了对电压跳变机理的模糊认识。The capacitance between gate and source of a-Si TFT consists of not only parasitic capacitance Cgspdue to overlaps between gate and source electrodes ,but also intrinsic capacitance Cgsi between the channel at the source sied and gate electrode. The formula for Cgsi is derived from gradual channel approximate model. The revised formula for level shift voltage △Vp at pixel electrode may explain some experimental data satisfactorily,which can not be done by traditional formula for △Vp, so the ambiguous view on △Vp mechanism is clarified.

关 键 词：象素电压 跳变 本征电容 图象 

分 类 号：TN918.8[电子电信—通信与信息系统]