硅超高速双极技术的潜力与变革方向  

Potential and Developing Trends of Silicon Ultrafast Bipolar Technology

作　　者：魏同立[1] 郑茳[1] 

机构地区：[1]南京东南大学微电子中心

出　　处：《电子学报》1994年第2期76-80,共5页Acta Electronica Sinica

摘　　要：本文评述了硅超高速双极技术的研究现状与极限，指出ＳｉＧｅ异质结构将显著提高现有纯Ｓｉ器件的电性能，并将成为发展下一代硅超高速双极器件和电路的技术途径。The research status and limitation of silicon ultrafast bipolar technology are reviewed in this paper.It is indicated that the SiGe heterostructure improves evidently the electrical performance of the pure silicon devices,which provides a new technical way for the development of silicon ultrahigh speed devices and circuits.

关 键 词：硅 硅锗 双极晶体管 异质结 

分 类 号：TN322.8[电子电信—物理电子学]