硒化锌单晶薄膜近带边发射的荧光寿命  

FLUORESCENCE LIFETIME OF THE NEAR-BAND EDGE EMISSION IN ZnSe SINGLE CRYSTAL THIN FILMS

作　　者：赵福潭[1] 李多禄[1] 苏锡安 范希武[1] 

机构地区：[1]中国科学院长春物理所激发态物理开放研究实验室

出　　处：《发光学报》1994年第2期153-157,共5页Chinese Journal of Luminescence

摘　　要：在２Ｋ下，对常压ＭＯＣＶＤ方法生长的ＺｎＳｅ单晶薄膜进行了光致荧光近带边发射谱的测量和辨认．并采用激光超短脉冲技术和时间相关单光子计数技术相结合的方法，对其在２Ｋ下近带边发射的荧光寿命进行了测量和分析，并讨论了自由激子弛豫过程．The PL spectra of near-band edge emission in ZnSe single crystal thin film grown by metal organic chemical vapour deposition have been measured and recognized. The fluorescence lifetime of those emission peaks have been measured by ultrashort laser pulse and time-correlated single-photon counting techniques. The relaxation processes of the free exciton in ZnSe single-crystal thin films have been discussed.

关 键 词：硒化锌 单晶 薄膜 近带边发射 荧光 

分 类 号：O472.3[理学—半导体物理]