半导体硅材料中掺杂元素锗的SRXRF微区分析研究  

A Study on Microanalysis of the Doping ElementGe in Si Semiconductor Material bv SRXRF

作　　者：闻莺[1] 袁汉章[1] 朱腾[1] 刘亚雯[1] 

机构地区：[1]北京矿冶研究总院,北京有色金属研究总院,北京科技大学,中国科学院高能物理研究所

出　　处：《分析试验室》1994年第3期77-79,共3页Chinese Journal of Analysis Laboratory

基　　金：国家自然科学基金

摘　　要：本文研究了同步辐射Ｘ射线微荧光分析法对半导体材料硅单晶中掺杂元素Ｇｅ的微区分析。利用同步辐射光源的优越性和微区扫描装置获得了清晰的掺杂元素Ｇｅ的二维分布图。实验结果表明，同步辐射Ｘ射线微荧光分析法对样品无导电性要求，可以成为对半导体材料硅单晶样品准确地进行大面积扫描微区测定的手段。对掺杂元素Ｇｅ在硅单晶生长过程中的分布行为和均匀性研究表明，在硅单晶生长的初始阶段由于小平面效应导致了掺杂元素径向分布的不均匀性，掺杂元素向单晶中心区域富集，这一结果为新型半导体材料的研制和生产提供了有价值的信息。he applications of SRXRMF(synchrotron radia-tion excited X-ray microfluorescence analysis)to sur-vey of doping element germanium in silicon monocrys-talline semiconductor material are studied.The cleartwo dimensional intensity distribution map of germa-nium is obtained by use of microprobe scanning appa-ratus and synchrotron radiation source. These experi-mental results show that the SRXRMF can become amicroanalysis means with accuracy,large area scan-ning and no-destruction for nonconducting monocrys-talline silicon。The distribution behaviour of germani-um during silicon monocrystal growth shows that theradial distribution inhomogeneity is caused by thefacet effect at the beginning stage of silicon monocrystal growth and the doping element is concentrated intothe center area of silicon monocrystal.The result isvaluable for studying and producing new semiconduc-tor material.

关 键 词：半导体 硅 掺杂元素 锗 微区分析 

分 类 号：TN304.11[电子电信—物理电子学]