失配应力引起的Ga_xIn_（1－x）P外延层能带隙的移动  

THE EFFECT OF MISMATCH STRAIN ON ENERGY BAND-GAP IN Ga_xIn_(1-x)P EPITAXIAL LAYERS ON (100) GaAs SUBSTRATES

作　　者：左健[1] 邢锦云[1] 李凡庆[1] 张运生[1] 张庶元[1] 许存义[1] 

机构地区：[1]中国科学技术大学结构分析开放实验室

出　　处：《光谱学与光谱分析》1994年第3期27-28,40,共3页Spectroscopy and Spectral Analysis

摘　　要：本文首次观察了用ＭＯＣＶＤ方法生长的ＧａｘＩｎ１－ｘＰ外延层的能带隙移动，并给出了ＧａｘＩｎ１－ｘＰ外延层光荧光（ＰＬ）峰能量随组分ｘ的变化关系，结果表明ＰＬ是探测混晶组分的简单而有效的方法之一。inter facial elastic strain induced by the lattice parameter mismatch between epilayer and substrate results in significant energy band-gap shift for GaxIn1-xP epitaxial layers.The energy band-gap shift was determined by comparing the photoluminescence peakenergies of the as-grown GaxIn1-xP layer with those from free-standing layer removed fromthe GaAs substrates. We found that photoluminescence is a accurate means to measure composition.

关 键 词：混晶 能带隙 失配应力 镓铟磷 

分 类 号：O471.5[理学—半导体物理]