稀土Er离子注入InP晶体中Er发光中心的形成和光激发机制  

FORMATION AND OPTICAL EXCITATION MECHANISM OF Er LUMINESCENCE CENTERS IN RARE EARTH Er-LMPLANTED InP

作　　者：周必忠[1] 陈世帛[1] 雷红兵[1] 简方方 陈辰嘉[1] 王学忠[1] 刘继周[1] 

机构地区：[1]厦门大学物理系,北京大学物理系

出　　处：《光谱学与光谱分析》1994年第6期5-9,共5页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金;北京大学稀土材料化学及应用国家重点实验室资助

摘　　要：用离子注人法对ＩｎＰ晶体实现高浓度稀土（ＲＥ）Ｅｒ的掺杂，探索了优质材料的制作规律和条件。在低温（１０～２００Ｋ）测量了光致发光谱（ＰＬ），观测到Ｅｒ的尖锐发光峰，其峰值波长１．５３８μｍ，其发光强度较大；研究了该材料的热退火行为，Ｅｒ发光中心的形成和光激活过程；用Ｒｕｔｈｅｒｆｏｒｄ背散射谱（ＲＢＳ）测量给出了热退火前后注Ｅｒ－ＩｎＰ晶体中Ｅｒ离子浓度的数值及深度分布；并对Ｅｒ发光中心的组成和光激发机制作了分析讨论。The rare earth doped Ⅲ - Ⅴ compound luminescence material InP: Er was prepared by ion implantation method. The photoluminescence spectra(PL) of the samples were measured at low temperature (10-200K ). The sharp luminescence peak (wavelength 1. 538μm) of Er centers has been observed. The Er concentration profiles were measured by Rutherford back-scattering spectrometry (RBS) in Er-implanted Inp crystals. The formation and optical excitation mechanism of Er luminescence centers in the samples were analysed.

关 键 词：Er离子 INP 发光中心 发光材料 

分 类 号：TN104.3[电子电信—物理电子学] O614.344[理学—无机化学]