GaAs／AlGaAs发光二极管列阵场分布特性的电光测量  

Electro-Optic Measurement and Simulation of Electric Field Distribution in GaAs/AlGaAs Array

作　　者：吴小萍[1] 朱祖华[1] 

机构地区：[1]浙江大学信息与电子工程学系

出　　处：《光学学报》1994年第5期528-533,共6页Acta Optica Sinica

基　　金：国家科委863高科技项目

摘　　要：应用一种新颖的无损伤测量技术－连续波电光检测法（ＣＷＥＯＰ）对ＧａＡｓ／ＧａＡｌＡｓ单异质结发光管列阵电场分布进行了扫描测量．实验结果反映了器件内电流注入的方向和载流子扩展情况；通过比较各单元电场分布，反映器件发光均匀性．文中详细介绍了测量原理、实验装置和实验结果及讨论，最后用计算机对电场分布作了模拟计算并与实验结果进行了对照．This paper introduces a new nondestructive method-continuous wave electro-optic probing (CWEOP), which we have applied to detect the electrical field distribution of GaAs/AlGaAs LED array. The experiment results reflect the direction of injected current, the spreading of charge carriers and the homogeneity of the light emission by comparing the field distribution of each unit. The principle, experimental setup of the method and the experimental results and discussions to them are given. The comparison between the result of computer-aided simulation and the experiment one is also given at last.

关 键 词：发光二极管 列阵 电场分布 砷化镓 

分 类 号：TN383.1[电子电信—物理电子学]