m线法研究掺杂LiNbO_3晶体波导基片的光损伤  

STUDY OF PHOTO DAMAGE OF WAVEGUIDE SUBSTRATE OF DOPED LiNbO_3 BY m-LINE METHOD

作　　者：许世文[1] 李铭华[1] 高元凯[1] 徐玉恒[1] 袁茵[1] 万立德[1] 

机构地区：[1]哈尔滨工业大学空间工程系,哈尔滨工业大学应用物理系

出　　处：《光子学报》1994年第2期179-183,共5页Acta Photonica Sinica

摘　　要：采用ｍ线法研究了掺杂ＬｉＮｂＯ３晶体波导基片的光损伤，发现抗光损伤能力依次为Ｍｇ：ＬｉＮｂＯ３、ＬｉＮｂＯ３、Ｆｅ：ＬｉＮｂＯ３（氧化），Ｆｅ：ＬｉＮｂＯ３（还原）。对于同样材料，质子交换光波导的抗光损伤能力高于钛扩散光波导。Photo damage of doped LiNbO3 waveguide was investigated by m～line mothed.It is found that the damage resistance is ordered as Mg:LiNbO3.LiNbOs、Fe:LiNbO3(oxidize)Fe:LiNbO3(reduced).of one kind of material,damage resistance of waveguideby photon exchange is larger than that of Ti-diffuse.

关 键 词：m线法 波导 光损伤 铌酸锂 

分 类 号：TN252[电子电信—物理电子学]