离子溅射诱发单相合金Cu—12at．％Au表面“元素局域富集”  

Element localized enrichment on Cu-12at.%Au alloy surface induced by ion sputtering

作　　者：王震遐[1] 章骥平[1] 潘冀生[1] 陶振兰[1] 朱福英[1] 张慧明[1] 赵烈[1] 

机构地区：[1]中国科学院上海原子核研究所,杭州大学

出　　处：《核技术》1994年第6期326-331,共6页Nuclear Techniques

基　　金：国家自然科学基金;中国科学院核分析技术开放研究实验室资助

摘　　要：用扫描电子显微镜结合电子探针微分析（ＳＥＭ／ＥＰＭＡ）技术测定了溅射诱发的靶点表面成份变化，观察了表面形貌结构凸起和凹陷处的成分差别．实验结果表明．单相合金Ｃｕ－１２ａｔ．％Ａｕ在３０ｋｅＶＡｒ＋离子溅射过程中产生了“表面元素局域富集”现象。根据“溅射－形貌增强元素局域富集模型”，它包括元素局域富集初级阶段和毛细压力发生的选择性诱发力的作用．并据此对实验结果进行了讨论。he scanning electron microscopy (SEM) combined with electron probe microanalyzer(EPMA) technique was used to measure the composition difference between the convex and concave regions of the sputtered surface. The experimental results show that the 'surface element localized enrichment' phenomenon occurs in a single-phase Cu-12at.% An alloy after 30keV Ar+ ions bombardment to a dose of 1.4×1018ions/cm2 as in multi-phase alloys. A model considering the effects of both the initial stage of the localized enrichment and the capillary pressure (Laplace pressure) producing a selective drift force was proposed for explaining these results.

关 键 词：溅射 单相合金 元素局域富集 富集 

分 类 号：TG174.44[金属学及工艺—金属表面处理]