HgCdTe晶片杂质浓度的检测  

Measurement of Impurity Concentration in HgCdTe

作　　者：杨彦[1] 廖仕坤[1] 宋炳文[1] 刘新进[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1994年第4期13-16,共4页Infrared Technology

摘　　要：采用红外透射法测ｎ型ＨｇＣｄＴｅ晶片的组分ｘ．范德堡法测晶片的载流子浓度ｎ０。用实测值ｘ和ｎ０计算出在相同低温热处理条件下不同组分（０．１９０＜ｘ＜０．２３０）的ｎ型ＨｇＣｄＴｅ晶片７７Ｋ时本征浓度ｎｉ和杂质浓度ｎｄ．得到比值ｎｄ／ｎｉ与组分ｘ的关系曲线。对此曲线分析可知，７７Ｋ时ＨｇＣｄＴｅ（０．１９０＜Ｘ＜０２３０）并不处于杂质电离饱和区，而是处于过渡区，故不可以将霍耳系数Ｒ确定的载流于浓度ｎ０视为杂质浓度ｎｄ。Measurement of the Composition of n-type HgCdTe IR transmission was made and its electron concentration was determined by Van der Pauw technique. Based on our experimental results, the intrinsic carrier and impurity concentration in n-HgCdTe were calculated. Curves of impurity-to -electron concentration ratio versus its composition were obtained. These curves show that HgCdTe is not in the ionized impurity saturation at 77 K, thus the carrier concentration determined by Hall coefficent cannot be considered as the impurity one.

关 键 词：碲镉汞 杂质浓度 红外透射法 检测 

分 类 号：TN219[电子电信—物理电子学]