CdTe／Cd_（1－x）Mn_xTe：In应变层量子阱的光荧光光谱  

PHOTOLUMINESCENCE SPECTRA OF CdTe/Cd1-xMnxTe:In STRAINED LAER MULTIPLE QUANTUM WELLS

作　　者：姜山[1] 张家明[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室

出　　处：《红外与毫米波学报》1994年第3期186-190,共5页Journal of Infrared and Millimeter Waves

摘　　要：报道了ＭＢＥ生长的ＣｄＴｅ／Ｃｄ１－ｘＭｎｘＴｅ：Ｉｎ调制掺杂应变层多量子附材料的光荧光光谱，低温下观察到一个由多电子－单个空穴散射引起的很强的费密边奇异的发光现象，对应于费密边能量位置发光峰有一个很强的增加，使整个发光锋具有明显的非对称性．分析讨论了引起费密边奇异现象的物理机制，测量了７７Ｋ下ＣｄＴｅ／Ｃｄ１－ｘＭｎｘＴｅ：Ｉｎ样品的调制光谱，与荧光光谱进行了比较，结果进一步支持了本文的结论．还测量了费密迪奇异随温度的变化，结果表明此现象在Ⅱ—Ⅵ族半导体多量子附材料中比Ⅲ─Ｖ族材料强得多．The photoluminescence (PL) spectra of CdTe/Cd1-xMnxTe: In strained layer multiple quantum wells, which were prepared by MBE, are reported. A strong enhancement of the photoluminescence intensity towards the electron Fermi energys which is caused by multiple electron-hole scattering processes,and a strong asymmetry of the PL peak were observed. The physical mechanism of the Fermi edge singularity is analyzed and discussed. The photomodulation (PR) spectrum of the sample at 77K was measured and the PR spectral results, considering the PL spectra together,give further support to the discussions. In addition, the temperature dependence of the Fermi-edge singularity was measured and the results show that the Fermi-edge singularity is much stronger than that in III-V semiconductors.

关 键 词：光荧光 费密边奇异 多量子阱 

分 类 号：TN304.25[电子电信—物理电子学]