迅速发展的LCVD技术  

Rapid developing LCVD technology

作　　者：王庆亚[1] 张玉书[1] 

机构地区：[1]吉林大学电子工程系集成光电子学国家重点联合实验室吉林大学实验区

出　　处：《激光技术》1994年第3期161-167,共7页Laser Technology

摘　　要：本文简要回顾了近十年来激光ＣＶＤ（ＬＣＶＤ）技术的发展概况及其在金属、电介质和半导体薄膜生长方面的应用情况。阐明了这种新发展起来的成膜技术不仅因其生长的低温化能够给器件带来优良的电学特性，同时也可利用其高精度的膜厚控制特性获得新结构的材料和器件。作者还对该技术的广泛的应用前景予以展望和肯定。In This paper,the development process and the application of LCVD technology in growing the metal film,dielectric film and semiconductor film in during the past ten years are reviewed.With this technology,not only the conventional de-vices can get the excellent electronic features because of low growth temperature,but also the new structure materials and new devices can be manufactured for using the high accurate thickness control.The wide application prospect of LCVD technology is described here.

关 键 词：LCVD 半导体膜 激光技术 

分 类 号：TN24[电子电信—物理电子学]