压力下CeSb晶体的导电特性研究  

A STUDY OF CONDUCTION PROPERTIES OF CeSb CRYSTAL UNDER PRESSURE

作　　者：黄桐凯 杨峰[1] 王世涛[2] 金汴骏 蒙如玲 

机构地区：[1]上海科技大学物理系 [2]上海教育学院 [3]中国科学院物理研究所

出　　处：《低温物理学报》1989年第2期100-106,共7页Low Temperature Physical Letters

摘　　要：在4.2—273K 温区内,0—14 Kbar 压强下,测量了 CeSb 单晶的电阻率.计及 P-f 互作用随温度的变化,我们在理论上计算了与压强有关的 CeSb 磁性电阻率,并将计算结果与实验值比较.The electrcal resistivity of CeSb crystal ha been measured in the 4.2-273 K temperature range and under pressure up to 14 kbar.The pressure dependence of the magnetic resistivity of CeSb has been calculated theoretically by taking into account the P-f mixing mechanism which varies with temperature.The present results are compared with the experimental data.

关 键 词：压力强 CESB 晶体 导电性 电阻率 

分 类 号：O738[理学—晶体学]