非晶硅薄膜应力研究  

STRAINS IN AMORPHOUS SILICON FILMS MEASURED BY X-RAY TOPOGRAPHY

作　　者：庞大文 李悦[1] 葛培文[2] 麦振洪[2] 

机构地区：[1]北京工业大学无线电系 [2]中国科学院物理研究所

出　　处：《太阳能学报》1989年第4期394-399,共6页Acta Energiae Solaris Sinica

摘　　要：应用x射线衍射技术,发展了一种自动测定晶体曲率半径的方法,通过测量两种不同工艺制备的非晶硅膜,比较其内应力。单晶硅衬底的曲率半径反比于膜厚,单位膜厚所产生的应力只依赖于膜的沉积工艺,而与膜厚无关。X-ray diffraction technology has been used to develop a method which can measure carvature radius automatically. The strains of two series of amorphous silicon thin film prepared under different processing conditions were measured and compared. The curvature radius of single crystal substrates was inversely proportional to the thickness of the film. The stress of unit thickness was found only dependent on processing conditions, but independent of film thickness.

关 键 词：非晶硅薄膜 薄膜 应力研究 

分 类 号：TN304.055[电子电信—物理电子学]