超高速半导体开关RSD的开通机理与大电流特性研究  

Study on Turn-on Mechanism and High-Current Characteristics of High-Speed Semiconductor Switch RSD

作　　者：余岳辉[1] 梁琳[1] 李谋涛[1] 刘玉华[1] 刘璐[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《电工技术学报》2005年第2期36-40,62,共6页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金资助项目(50277016)。

摘　　要：基于反向注入控制RSD(ReverselySwitchedDynistor)的大面积快速均匀开通、可无限串联、功率大、换流效率高、寿命长的特点,新开通机制的RSD将在脉冲功率技术中获得重要应用。本文研究了RSD的开通机理和开通条件,为器件开通特性的改进和预充电路的合理设计提供了依据;实验还表明,由小直径RSD的极限电流测试结果,可以用经验公式得到同类结构的任意通流面积RSD脉冲大电流耐量。Based on the characteristics of high-speed and simultaneous turn-on, infinite series, high power, high efficiency of current transformation and long life of reverse switching controlled Reversely Switched Dynistor (RSD), RSD of newly turn-on mechanism will win important applications in the pulse power technology. This thesis researches into the turn-on mechanism and condition of RSD, which has provided basis for the improvement on the device's turn-on characteristics and the triggering circuit's reasonable design. According to the result of the utmost current test of RSD with small diameter, it also shows that RSD pulse high-current tolerance of any turn-on current area with the same structures could be acquired by the experiential formula in the experiment.

关 键 词：大功率 开关 RSD 开通特性 脉冲 

分 类 号：TM56[电气工程—电器]