硅中离子注入RTA剩余损伤对p－n结反向漏电流的影响  

Influence of the ResiduaI Damage in Ion Implanted Silicon After RTA on the Reverse Leakage Current of p-n Junctions

作　　者：刘家璐[1] 张廷庆[1] 

机构地区：[1]西安电子科技大学

出　　处：《微电子学》1994年第2期56-60,共5页Microelectronics

摘　　要：采用静电计测量了ＢＦ￣＋２、Ｆ￣＋Ｂ￣＋和Ａｒ￣＋＋Ｂ￣＋注入硅ＲＴＡ二极管的反向漏电流；借助高压透射电镜观察了ＢＦ￣＋２、Ｆ￣＋＋Ｂ“和Ａｒ￣＋＋Ｂ￣＋注入硅ＲＴＡ剩余损伤；深入讨论了剩余损伤对二极管反向漏电流的影响。结果表明，１）ＢＦ￣＋２注入二极管的反向漏电流最小，２）注入层剩余损伤和ＲＴＡ期间导致的热应力可能是影响二极管反向漏电流的主要原因。he reverse leakage current of BF￣+2.p￣++B￣++ and Ar￣++B￣+implanted silicon dltoes treated with RTA hasbeen measured using an electrometer,and the residual damage after RTA has been deerved using TEM. Effects of theresidual demage on the reverse leakage current of the ion impfanted diedes have been dlscued in detau,It has beenshown that the reverse leakage cutrent is minitnized for BF￣+2 implanted diodes,and the residual damage in the imptantedlayer and the thermal stress caused by RTA process could be the main factors affecting the revelse leakage current of theimplanted diodes.

关 键 词：离子注入 热退火 二极管 P-N结 

分 类 号：TN305.3[电子电信—物理电子学]