AlSiCu反应离子刻蚀技术  

Reactive Ion Etching of AlSiCu

作　　者：马宏 

机构地区：[1]中国华晶电子集团公司中央研究所

出　　处：《微电子学》1994年第3期34-40,共7页Microelectronics

摘　　要：在Ｔｅｇａｌ１５１２ｅ反应离子刻蚀（ＲＩＥ）设备上，利用Ｃｌ＿２和ＳｉＣｌ＿４为主要刻蚀气体，进行了ＡｌＳｉ０．８％－Ｃｕ２％的ＲＩＥ工艺研究，详细讨论了影响工艺的诸多因素，涉及ＡｌＳｉＣｕ材料本身结构的差异，ＲＩＥ工艺各参数，后处理等许多方面；给出实用化的工艺程序；最小加工线宽达到２μｍ，体刻蚀速率达８７０ｎｍ／ｍｉｎ，均匀性±５％，线宽损失小于１０％，对热氧化ＳｉＯ＿２的刻蚀选择比为４∶１，对ＡＺ１４５０Ｊ正性抗蚀剂的刻蚀选择比大于１．８∶１；该工艺使用效果良好，达到实用化水平。Reactive ion etching (RIE)of Al-Si(0.8%)-Cu(2%)has been investigated on Tegal 1512e RIE system us-ing SiCl_4 and Cl_2 as the main gas source. A detailed discussion is made about a number of factors affecting the process, in-cluding the diffetence in the structures of AlSiCu itself, perameters for RIE process and subsequent processing. A practicalprocess procedure is given. The smallest line width etched is 2μm and a bulk etching rate of 870nm/min was achieved, with 5% uniformity and less than 10% loss in critical dimension. The selectivity ratio is 4∶ 1 to thermal oxidized SiO_2and greater than 1.8∶ 1 to AZ1450 positive resist. Excellent results have been obtained in practical production.

关 键 词：反应离子刻蚀 各向异性 AlSiCu 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]