硅槽刻蚀技术中的源气体选择  

Choosing Correct Process Gases for Silicon Trench Etching

作　　者：王清平[1] 苏韧[1] 

机构地区：[1]四川重庆电子工业部第24研究所

出　　处：《微电子学》1994年第6期65-68,共4页Microelectronics

摘　　要：源气体及组分的选择是硅槽刻蚀技术的关键因素。本文介绍了刻蚀过程中源气体及组分对硅的作用方式，从刻蚀速率、侧壁钝化、损伤、刻蚀均匀性等方面分析比较了近年来所出现的几种硅糟刻蚀用源气体及组分。Correct selection of source gases and their compositions is one of the critical factors for Si trench etching.Action of source gases and their compositions on silicon in etching process is described in the paper. Source gases used in recent years for Si trench etching and their compositions are analyzed and compared in regard to etching rate.side wall passivation.damages and etching uniformity etc.

关 键 词：硅槽刻蚀 源气体 刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]