电子束致沉积手控生长碳纳米线  

E-beam induced carbon nanowires in TEM

作　　者：王鸣生[1] 王晶云[1] 陈清[1] 彭练矛[1] 

机构地区：[1]北京大学电子学系教育部纳米器件物理与化学实验室,北京100871

出　　处：《电子显微学报》2005年第1期11-16,共6页Journal of Chinese Electron Microscopy Society

基　　金：教育部博士点项目(No.20030001070);教育部重大研究项目(No.10401);国家纳米科学中心协作项目.

摘　　要：用电子束致沉积(EBID)来制备各种纳米尺寸的结构在纳米材料的制备和器件构建方面有着良好的应用前景。相对于聚焦离子束(FIB),它具有对样品损伤小和所得结构尺寸更小等优点。此前,电子束致沉积的工作大多数在扫描电镜中完成,而在透射电镜中沉积直到近两年才发展起来。本文尝试在普通热发射透射电镜中,手动控制生长碳纳米线、点等结构。对碳纳米线的生长过程进行了原位观测,并对电子束斑的大小、形状和辐照时间对沉积物形状的影响作了初步的研究。最后对电子束致沉积可控生长无定型碳纳米线可能的应用作了一些探索。The electron beam induced deposition (EBID) technique, which is usually done in scanning electron microscope (SEM), has just introduced in transmission electron microscope (TEM) within these two years. EBID is a promising method to make controllable nanostructures. Comparing with focused ion beam (FIB), EBID is able to get finer structures, while cause less damage on samples. In this paper, various depositions such as carbon nanowires and carbon particles were made in a conventional TEM. The depositing process was in situ observed by TEM, and the influence of e-beam size, shape and irradiation time on the shape of depositions were summarized. Potential future applications of amorphous carbon wires made by EBID were discussed.

关 键 词：电子束 纳米线 聚焦离子束 发射 器件 沉积 FIB 透射电镜 损伤 辐照时间 

分 类 号：TB383[一般工业技术—材料科学与工程]