非晶FeCuNbSiB多层膜的巨磁阻抗效应(英文)  

GMI Effect Study of Amorphous FeCuNbSiB Multilayered Films

作　　者：Oumarou M 李晓东[1] 袁望治[1] 阮建中[1] 赵振杰[1] 杨燮龙[1] 

机构地区：[1]华东师范大学物理系,上海200062

出　　处：《华东师范大学学报（自然科学版）》2005年第1期68-72,143,共6页Journal of East China Normal University(Natural Science)

基　　金：上海市科委资助项目(0252nm004,0352nm060)

摘　　要：研究在250℃退火温度下非晶FeCuNbSiB薄膜的巨磁阻抗效应.X-ray谱和Mossbauer谱显示样品为非晶状态.导电层的厚度为2μm,磁性层的厚度为1μm.三明治结构的最大阻抗效应为20%.为了提高巨磁阻抗效应.在两磁性层之间加入了绝缘层SiO2,在250℃退火温度下最大阻抗效应为62%.随着驱动电流频率的增大.磁阻抗效应曲线由随磁场的单调下降变为出现峰的结构.Giant magneto-impedance (GMI) has been observed in amorphous FeCuNbSiB/Cu/ FeCuNbSiB sandwiched films annealed at 250℃. The conductive layer is about 2μm while the outer magnetic layers are about 1μm thick each. The GMI ratio of 20% has been obtained. In the goal to improve this ratio, two insulator layers have been used between the different layers followed by an annealing process at 250℃. A GMI ratio of 62% has been obtained. The displacement of GMI peaks with increasing of driving current frequency appears also. The amorphous state of the films was confirmed by an X-ray diffraction and Mossbauer spectrum.

关 键 词：巨磁阻抗效应 多层膜 磁控溅射 FeCuNbSiB 绝缘层 

分 类 号：O484[理学—固体物理]