二氧化锆薄膜制备及其特性测量  

Preparation and character measurement of ZrO_2 films

作　　者：任树喜[1] 马洪良[1] 徐国庆[1] 张义炳[1] 

机构地区：[1]上海大学物理系,上海200436

出　　处：《强激光与粒子束》2005年第2期222-224,共3页High Power Laser and Particle Beams

摘　　要：在室温下采用电子束蒸发的办法制备二氧化锆(ZrO2)薄膜。借助紫外分光光度计、原子力显微镜(AFM)、X射线衍射(XRD)等方法研究了薄膜的透射率和表面结构。同时研究了不同退火温度对薄膜物理性质的影响。在退火温度700,900,1 050 ℃时显微镜图像没有明显差别。随着退火温度的变大,薄膜表面的晶粒的直径逐渐变大,但粒径均在25 nm左右。当退火温度达到 1 150 ℃时,粒径变得很大(约 400 nm)。在700,900,1 050 ℃下退火后的薄膜的X射线衍射谱没有明显差别。在退火温度1 150 ℃下出现了较高的峰,研究结果表明:退火温度的增加,大量大粒径二氧化锆单晶晶粒出现,使得二氧化锆薄膜的漏电流增大,从而导致其热稳定性变差。Zirconium oxide films were deposited on SiO2 substrates using high vacuum electron beam evaporation at room temperature. The films' transmittance and surface structure were investigated by means of ultraviolet spectrophotometer, AFM and XRD. The main effects of annealing at different temperatures on the physical properties of the films were studied as well. The AFM images differ little for ZrO2 films annealed at 700, 900, and 1050°C, showing crystal grains about 25 nm in diameter. However, the diameter of grains tends to grow with the temperature increase and it is about 400 nm at 1150°C. The leakage current obviously increases and decreases the hot stability of zirconium oxide film while the temperature increases to about 1150°C.

关 键 词：电子束蒸发 氧化锆(ZrO2)薄膜 退火温度 透射率 

分 类 号：O43[机械工程—光学工程]