基板温度对SnO_2:Sb薄膜结构和性能的影响  

Effect of substrate temperature on the structure and properties of SnO_2∶Sb films

作　　者：谢莲革[1] 汪建勋[1] 沈鸽[1] 翁文剑[1] 杜丕一[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《功能材料》2005年第3期411-413,418,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2001AA320202)

摘　　要：以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响。实验表明 550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在 650℃下沉积的薄膜具有最低的方块电阻值,为 72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。SnO2:Sb films have been grown by APCVD method at different substrate temperature, using MBTC and SbCl3 as precursors. The structure and morphology of the films were characterized by means of XRD and SEM, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. Then the effect of substrate temperature on the structure and properties of SnO2:Sb films were investigated. The results show that the films grown above 550°C were polycrystalline, and retain the rutile structure. A minimum sheet resistance of 72 Ω/ was obtained for the film prepared at 650°C. The transmittance and reflectivity in the visible region of these films lowed with the increasing of the substrate temperature.

关 键 词：APCVD法 Sb掺杂SnO2薄膜 基板温度 

分 类 号：TB34[一般工业技术—材料科学与工程]