CuCl^+离子注入α-Al_2O_3晶体退火前后的光学分析  

Optics analyses in CuCl^+ ion implanted α-Al_2O_3 crystal before and after annealing

作　　者：王春芬[1] 阳剑[1] 王新练[1] 杨斌[1] 汪德志[1] 黄宁康[1] 

机构地区：[1]四川大学原子核科学技术研究所

出　　处：《功能材料》2005年第3期427-430,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10176106)

摘　　要：CuCl+离子注入不同晶向的α Al2O3 晶体,在还原气氛下退火,对退火前后的试样进行了光吸收谱及荧光谱测量。结果发现不同晶向的α Al2O3 晶体在不同注入条件下在高能区段均有强的吸收,经不同温度下的退火,其吸收强度有不同程度的下降。通过光吸收谱的高斯拟合以及荧光谱的分析确认, CuCl+离子注入α Al2O3 晶体产生的点缺陷主要为 F心、F+心、F+22 心、F2 心、F+2 心。Specimens of single crystals α-Al2O3 with different orientations were implanted with CuCl+ ions and then annealed in reducing atmosphere at different temperature. The results of optical absorption and luminescence analyses for the specimens show that a strong absorption can be seen in the high energy sector for all of the specimens. The absorption intensity decreased after annealing, and the degree in decrease was dependent on annealing temperature. The absorption curves evaluated by Gaussian fitting show that there were point defects such as F, F+, F2, F F2+ and F2+2 centers in the CuCl+ implanted α-Al2O3 crystals. And luminescence measurements confirmed these results of fitting.

关 键 词：离子注入 Α-AL2O3 CuCl^+ 

分 类 号：TG174.4[金属学及工艺—金属表面处理] O433.5[金属学及工艺—金属学]