中子嬗变掺杂硅(NTD-Si)的实用化是电力半导体器件发展的突破口之一  

Practicallization of Neutron Transmutation Doped-Silicon(NTD-Si)Is the One of Breakthrough Points in Development of Power Semiconductor Devices

作　　者：王正元[1] 

机构地区：[1]北京电力电子新技术研究开发中心,北京100088

出　　处：《电力电子》2003年第6期29-30,8,共3页Power Electronics

摘　　要：评述了30年前第一批用中子嬗变掺杂硅单晶(即无条纹硅)制造高电压、大电流整流管和晶闸管的报道。由此介绍硅材料的中子嬗变掺杂技术原理、发展进程,指出NTD硅的实用化成为电力半导体器件向大电流(大直径)、高电压方向发展的一个重要突破口。This paper reviews a report about the first lot of rectifiers and thyristors, which were manufactured by NTD-Si (that is the stripeless silicon), with high voltage and high current 30-years ago. The paper introduces also the theory and development process of the neutron transmutation doping technology for Si-materials, points out the practicallization of NTD-Si has already become the one of very important breakthrough points in the development to wards high current (big diameter) and high voltage for power semiconductor devices.

关 键 词：中子嬗变掺杂硅 无条纹硅 电力半导体器件 高电压 大电流 

分 类 号：TN335[电子电信—物理电子学]