金属离子在氧化物非晶薄膜中的行为  

Behaviours of Metal Particles in Amorphous Oxids Film

作　　者：谭辉[1] 陶明德[1] 涂楚辙[1] 

机构地区：[1]中国科学院新疆物理所,新疆大学物理系

出　　处：《新疆大学学报（自然科学版）》1994年第4期66-69,共4页Journal of Xinjiang University(Natural Science Edition)

摘　　要：ＣｏＭｎＮｉＯ非晶薄膜经金属离子注入后导电能力增强，材料电阻率下降：Ｘ射线和扩展电阻测量表明：随着注入剂量的增加，薄膜的晶化温度降低，电阻率下降．这些结果表明金属离子在薄膜中可能形成高电导网络，提供载流子输运第二沟道．这些高电导网络与非晶薄膜的多重网络进行补偿．使材料的电阻率降低．The implanted metal particles in CoMnNiO amorphous film can improve film conduction property by decreasering film resistivity.XRD pattern and spreading resistance measurement indicate that as implanting dose is increased,the film crystallization temperature decreases and the film resistivity decreases also.The mechanism of these phenomenon is thought to be a compensate effect of paralled connection of the high-conduction implanted layers and the amorphous multinetworksin the materal. Alter annealed and crystallized,the film forms spinel solid solutin.

关 键 词：非晶薄膜 离子注入 氧化物 金属离子 导电性 

分 类 号：O484.2[理学—固体物理]